april 2010 doc id 17395 rev 1 1/8 8 BYV52HR aerospace 30 a - 200 v fa st recovery rectifier features very small conduction losses negligible switching losses high surge current capability high avalanche energy capability hermetic package target radiation qualification: ? 150 krad (si) low dose rate ? 3 mrad high dose rate package mass: 10 g escc qualified description packaged in an hermetic to-254 this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency dc to dc converters, and other aerospace applications. the complete escc specification for this device is available from the european space agency web site. st guarantees full compliance of qualified parts with such escc de tailed specifications. figure 1. device configuration to-254 1 3 byv52-200fsy1 byv52-200fsyhrb terminal 1: terminal 2: terminal 3: the case is not connected to any lead cathode no connection anode table 1. device summary (1) 1. contact st sales office for information about the specif ic conditions for products in die form and qml-q versions. order code escc detailed specification quality level lead finish eppl i f(av) v rrm t j(max) v f (max) byv52-200fsy1 - engineering model gold - 30 a 200 v 150 c 1.15 v byv52-200fsyhrb 5103/030/01 flight part solder dip y www.st.com
characteristics BYV52HR 2/8 doc id 17395 rev 1 1 characteristics table 2. absolute maximum ratings symbol characteristic value unit i fsm forward surge current (per diode) (1) 1. sinusoidal pulse of 10 ms duration 400 a v rrm repetitive peak reverse voltage (2) 2. pulsed, duration 5 ms, f = 50 hz 200 v i o average output rect ified current (50% duty cycle): (3) 3. for t case +120c, derate linearly to 0 a at +150c. 30 a i f(rms) forward rms current (per diode) 30 a t op operating case temperature range (4) 4. for devices with hot solder dip l ead finish all testing performed at t amb > +125 c are carried out in a 100% inert atmosphere. -55 to +150 c t j junction temperature +150 c t stg storage temperature range (4) -55 to +150 c t sol soldering temperature (5) 5. duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same lead shall not be resoldered until 3 minutes have elapsed. +260 c table 3. thermal resistance symbol parameter value unit r th (j-c) junction to case (1) 1. package mounted on infinite heatsink. 0.9 c/w
BYV52HR characteristics doc id 17395 rev 1 3/8 s to evaluate the conduction losses use the following equation: p = 0.74 x i f(av) + 1.00 x i f 2 (rms ) table 4. electrical measurements at ambiant temperature (per diode), t amb = 22 3 c symbol characteristic mil-std-750 test method test conditions limits units min. max. i r reverse current 4016 dc method, v r = 200 v - 25 a v f1 (1) forward voltage 4011 pulse method, i f = 20 a - 1.01 v v f2 (1) pulse method, i f = 30 a - 1.15 v v br breakdown voltage 4021 i r = 100 a 200 - v c capacitance 4001 v r = 10 v, f = 1 mhz - 400 pf t rr reverse recovery time 4031 i f = 1 a, v r = 30 v, di f /dt = -50 a/s -55ns z th(j-c) (2) relative thermal impedance, junction to case 3101 i h = 15 to 40 a, t h = 50 ms i m = 50 ma, t md = 100 s calculate v f (3) c/w 1. pulse width 300s, duty cycle 2% 2. performed only during screening tests parameter drift values (initial measurem ents for htrb), go-no-go. 3. the limits for vf shall be defined by the manufacturer on ever y lot in accordance with mil-std-750 method 3101 and shall guarantee the r th(j-c) limits specified in maximum ratings. table 5. electrical measurements at high and low temperatures (per diode) symbol characteristic mil-std-750 test method test conditions (1) limits units min. max. i r reverse current 4016 t case = +125 (+0, -5) c dc method, v r = 200 v -15ma v f2 (2) forward voltage 4011 t case = +125 (+0, -5) c pulse method, i f = 20 a -0.95v t case = +55 (+0, -5) c pulse method, i f = 20 a -1.15v 1. read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. alternatively a 100% inspection may be performed. 2. pulse width 300s, duty cycle 2%
package information BYV52HR 4/8 doc id 17395 rev 1 2 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 2. metal flange mount package (to-254 (a) ), 3 lead dimension definitions a. the terminal identification is specif ied by the device configuration. see figure 1 for terminal connections b a c d e ?f g h ?i j k k l ?m n r1 r2 1 2 3
BYV52HR package information doc id 17395 rev 1 5/8 table 6. metal flange mount package (to-254), 3-lead dimension values reference dimension in millimetres dimlension in inches min. max. min. max. a 13.59 13.84 0.535 0.545 b 13.59 13.84 0.535 0.545 c 20.07 20.32 0.790 0.800 d 6.3 6.7 0.248 0.264 e 1 3.9 0.039 0.154 ?f 3.5 3.9 0.138 0.154 g 16.89 17.4 0.665 0.685 h 6.86 bsc 0.270 bsc ?i (1) 1. 3 locations 0.89 1.14 0.035 0.045 j 3.81 bsc 0.150 bsc k 3.81 bsc 0.150 bsc l 12.95 14.5 0.510 0.571 ?m 3.05 typ. 0.120 typ. n - 0.71 - 0.028 r1 (2) 2. radius of heatsink flange corner - 4 locations - 1 - 0.039 r2 (3) 3. radius of body corner - 4 locations 1.65 typ. 0.065
ordering information BYV52HR 6/8 doc id 17395 rev 1 3 ordering information table 7. ordering information (1) order code escc detailed specification package lead finish comment marking mass eppl packing byv52-200fsy1 - to-254 gold single die byv52200fsy1 + beo 10 g - strip pack byv52-200fsyhrb 5103/030/01 solder dip 510303001 + beo y 1. contact st sales office for information about the specif ic conditions for products in die form and qml-q versions.
BYV52HR revision history doc id 17395 rev 1 7/8 4 revision history table 8. document revision history date revision changes 14-apr-2010 1 first issue.
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